Samsung Electronics steps up chip-stacking with memory packages that are faster, smaller and consume less power
stacked memory package using through-silicon via (TSV) technology. The new that offer a combined 2Gb of high density memory. Using the TSV-processed 2Gb DRAMs, Samsung says it can create a 4GB DIMM based on advanced WSP technology, while reducing overall package size, power use and increasing chip speed.
In today’s MCPs, memory chips are connected by wire bonding, requiring vertical spacing between dies that is tens of microns deep. That wire of microns wide for the die-connecting wires. Samsung’s WSP technology forms the memory circuits directly with a copper filling, eliminating the need for gaps of extra space and wires protruding beyond the sides of the dies.
These advantages permit a significantly smaller footprint and thinner package.
Inside the new WSP, the TSV is housed within an aluminum pad to escape the performance-slow-down effect caused by the redistribution layer. Samsung announced a similar method last year , but the company says that, due to the complexity of DRAM stacking, In addition, as the back side of the wafer is ground away to make a thinner stack of multiple dies, the wafer has had a tendency to curve, creating physical distortion in the die.
To overcome this additional critical concern in designing low-profile, high-density MCPs containing DRAM circuitry, has been applied to improve the thin-die-cutting process.
ever-growing demand for smaller-sized, high-speed, high-density memory,” said Memory Division, Samsung Electronics. “In addition, the performance combinations of semiconductor packaging, such as system-in-package solutions will continue to ring true, especially in light of the considerable concern that MCP would soon suffer from performance limitations when connected using current technologies.
Earlier this month, IBM using through-silicon via technology, boasting allows for the addition of up to 100 times more channels, or pathways, for that information to flow compared to traditional chips.
2007, with production in 2008.
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